一种新型的分段曲率补偿带隙基准源设计

针对传统的带隙基准源曲率补偿效果较差的问题,采用两路跨导放大器设计了一种新型的分段曲率补偿的带隙基准源。其中一路跨导放大器比较三极管的发射极-基极电压VEB和一个粗略的基准电压,在低温段产生随温度升高近似成指数减小的电流;另一路跨导放大器比较VEB和另一个粗略的基准电压,在高温段产生随温度升高近似成指数增大的电流,对传统的电流型带隙基准源进行精确的分段曲率补偿。基于TSMC 0. 18μm CMOS工艺,对电路进行设计和仿真。仿真结果表明,3. 3 V电源电压时,在-40～+150℃温度范围内,温度系数为1. 84×10^-6/℃,低频时的电源抑制比为-98. 3 d B,线性调整率为0. 0047%。

Design of a novel piecewise curvature compensated bandgap reference

Aiming at the problem of poor curvature compensation for traditional bandgap reference,a bandgap reference with novel piecewise curvature compensation was designed based on two transconductance amplifiers. One transconductance amplifier compared the emitter-base voltage VEB of the triode with a coarse reference voltage,which generated a current that decreased exponentially with increasing temperature in the low temperature range approximately. The other transconductance amplifier compared the voltage VEB with another coarse reference voltage,producing an approximately exponentially increasing current with increasing temperature in the high temperature range. These two currents were used to provide precise piecewise curvature compensation for the conventional current-type bandgap reference. The circuit was designed and simulated in TSMC 0. 18 μm CMOS process. The simulation results show that the temperature coefficient is 1. 84×10-6/℃ in the temperature range of-40-+150 ℃ at 3. 3 V power supply voltage,the power supply rejection ratio( PSRR) is-98. 3 dB at low frequency,and the linear adjustment rate is 0. 0047%.