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高抗弯强度微波介电LTCC基板材料的研究
引用本文:李在映,李强,鄢健,田茂林,聂瑞.高抗弯强度微波介电LTCC基板材料的研究[J].电子元件与材料,2020(1):86-89.
作者姓名:李在映  李强  鄢健  田茂林  聂瑞
作者单位:;1.成都宏科电子科技有限公司;2.中国空间技术研究院中国航天宇航元器件工程中心
摘    要:为了适应基板高载荷、高可靠的要求,制备了一种适用于LTCC应用的高抗弯强度微波介电陶瓷材料。该陶瓷材料由Ca-Mg-Zr-Zn-B-Si微晶玻璃和氧化铝构成。采用差热热重同步分析仪、扫描电镜、X射线衍射分析仪、带谐振腔夹具的矢量网络分析仪和三点抗弯测试仪研究了陶瓷材料的烧结性能、微观结构、抗弯强度和介电性能。860℃烧结15 min获得陶瓷具有最佳致密度,其抗弯强度大于400 MPa,1. 9 GHz频率时εr=8. 12,tanδ=0. 0028;15 GHz频率时εr=7. 96,tanδ=0. 0031。该陶瓷与金、银电极共烧匹配良好,适用于制备LTCC基板。

关 键 词:LTCC  介电性能  抗弯强度  基板

Investigation of microwave dielectric ceramics with high flexural strength for LTCC substrate application
LI Zaiying,LI Qiang,YAN Jian,TIAN Maolin,NIE Rui.Investigation of microwave dielectric ceramics with high flexural strength for LTCC substrate application[J].Electronic Components & Materials,2020(1):86-89.
Authors:LI Zaiying  LI Qiang  YAN Jian  TIAN Maolin  NIE Rui
Affiliation:(Chengdu Hongke Electronics Technology Co.,Ltd,Chengdu 610100,China;China Aerospace Components Engineering Center,China Academy of Space Technology,Beijing 100094,China)
Abstract:In order to meet the requirements of high load ability and high reliability of substrates,a microwave dielectric ceramic with high bending strength for low-temperature co-fired ceramics( LTCC) application was prepared. The ceramic is composed of Al2O3 and Ca-Mg-Zr-Zn-B-Si glass. The sintering behavior,microstructure,bending strength,and dielectric properties of the materials were analyzed using thermogravimetry and differential scanning calorimeter,scanning electron microscope,X-ray diffraction analyzer,vector network analyzer with dielectric resonators,and three-point bending tester. The ceramic sintered at 860 ℃ for 15 min has a maximum density and great bending strength more than 400 MPa,and shows microwave dielectric properties of εr = 8. 12,tanδ= 0. 0028 at 1. 9 GHz and εr = 7. 96,tanδ= 0. 0031 at 15 GHz. The ceramic is compatible with Au or Ag electrode and can be promising candidate for LTCC substrate application.
Keywords:LTCC  dielectric properties  bending strength  substrate
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