High performance 1 mm AlGaN/GaN HEMT based on SiC substrate |
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Authors: | Weijun Luo Xiaojuan Chen Chengzhan Li Xinyu Liu Zhijing He Ke Wei Xiaoxin Liang and Xiaoliang Wang |
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Affiliation: | (1) Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China;(2) Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100083, China |
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Abstract: | This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed
using home-made AlGaN/GaN epitaxy structures based on SiC substrate. Metal-organic chemical vapor deposition (MOCVD) was used
to generate the epitaxy layers. Corresponding experiments show that the device has a gate length of 0.8 μm exhibiting drain
current density of 1.16 A/mm, transconductance of 241 ms/mm, a gate-drain breakdown voltage larger than 80 V, maximum current
gain frequency of 20 GHz and maximum power gain frequency of 28 GHz. In addition, the power gain under the continues wave
condition is 14.2 dB with a power density of 4.1 W/mm, while under the pulsed wave condition, power gain reaches 14.4 dB with
power density at 5.2 W/mm. Furthermore, the two-port network impedance characteristics display great potential in microwave
application.
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Translated from Chinese Journal of Semiconductors, 2006, 27(11): 1981–1983 译自: 半导体学报] |
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Keywords: | AlGaN/GaN high electron mobility transistor (HEMT) microwave power power gain |
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