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| Luminescence Properties of Tb^3＋ -Doped LuAG Films Prepared by Pechini Sol-Gel Method | |
| 引用本文： | 游宝贵 尹民 张慰萍 郭海 林林. Luminescence Properties of Tb^3＋ -Doped LuAG Films Prepared by Pechini Sol-Gel Method[J]. 中国稀土学报(英文版), 2006, 24(6): 745-748. DOI: 10.1016/S1002-0721(07)60021-0 |
| 作者姓名： | 游宝贵 尹民 张慰萍 郭海 林林 |
| 作者单位： | [1]Structure Research Laboratory, Chinese Academy of Sciences, Hefei 230026, China [2]Physics Department, University of Science and Technology of China, Hefei 230026, China [3]Department of Physics, Zhejiang Normal University, Jinhua 321004, China |
| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金 |
| 摘 要： | Lu3Al5O12（LuAG） thin films with different Tb^3＋ concentration were prepared on carefully cleaned （111 ） silicon wafer by a Peehini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb^3＋ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Th3 ＋ on the luminescent properties were also investigated. For a comparison study, Th^3＋-doped LuAG powders were also prepared by the same sol-gel method. |
| 关 键 词： | Pechini溶胶-凝胶法 铽掺杂 LuAG薄膜 制备 发光性质 稀土 闪烁材料 |
| 文章编号： | 1002-0721（2006）06-0745-04 |
| 收稿时间： | 2006-06-25 |
| 修稿时间： | 2006-09-12 |
Luminescence Properties of Tb -Doped LuAG Films Prepared by Pechini Sol-Gel Method |
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| You , Yin Min, Zhang Weiping, Guo Hai,Lin Lin. Luminescence Properties of Tb -Doped LuAG Films Prepared by Pechini Sol-Gel Method[J]. Journal of Rare Earths, 2006, 24(6): 745-748. DOI: 10.1016/S1002-0721(07)60021-0 | |
| Authors: | You Yin Min Zhang Weiping Guo Hai Lin Lin |
| Affiliation: | aStructure Research Laboratory, Chinese Academy of Sciences, Hefei 230026, China bPhysics Department, University of Science and Technology of China, Hefei 230026, China cDepartment of Physics, Zhejiang Normal University, Jinhua 321004, China |
| Abstract: | Lu3Al5O12 (LuAG) thin films with different Tb3 concentration were prepared on carefully cleaned (111) silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb3 doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb3 on the luminescent properties were also investigated. For a comparison study, Tb3 -doped LuAG powders were also prepared by the same sol-gel method. |
| Keywords: | sol-gel LuAG luminescence properties thin film concentration dependence rare earths |
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