Infrared light-emitting diodes based on GaInAsSb solid solutions grown from lead-containing solution-melts |
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Authors: | A P Astakhova E A Grebenshchikova É V Ivanov A N Imenkov E V Kunitsyna Ya A Parkhomenko Yu P Yakovlev |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | Light-emitting diodes (LEDs) were fabricated on the basis of GaInAsSb alloys grown from lead-containing solution-melts. Electroluminescence characteristics and their current and temperature dependences were studied. The external photon yield at room temperature was 1.6 and 0.11% for LEDs with emission wavelengths λ=2.3 and 2.44 µm, respectively. For LEDs with emission wavelength λ=2.3 µm, the average emission power P=0.94 mW was attained in the quasi-continuous mode at room temperature. In the pulsed mode, the peak radiation power was P=126 mW at a current of 3 A, a pulse duration of 0.125 µs, and a frequency of 512 Hz. |
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