| 陷阱俘获存储器中电荷积累过程对保持特性的影响 |
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| 引用本文： | 金锐,刘晓彦,杜刚,康晋锋,韩汝琦.陷阱俘获存储器中电荷积累过程对保持特性的影响[J].半导体学报,2010,31(12):124016-4. |
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| 作者姓名： | 金锐 刘晓彦 杜刚 康晋锋 韩汝琦 |
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| 基金项目： | Project supported by Samsung Electronics Co. Ltd. （Nos. 20060001050, 2006CB302705）. |
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| 摘 要： | 本文通过数值模拟的方法对陷阱俘获存储器单元在多次擦写过程中的电荷积累过程进行了分析。由于多次擦写后陷阱电荷的积累，电荷之间的复合过程成为一个重要的问题。分析结果显示擦写过程中积累的空穴会对存储器的保持特性产生影响，同时在分析器件保持特性的时候电荷之间的复合机制必须加以考虑。
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| 关 键 词： | 电荷积累 记忆保持 累积效应 捕捉 陷阱电荷 重组机制 数值模拟 |
| 收稿时间： | 1/13/2010 3:43:54 PM |
| 修稿时间： | 7/29/2010 4:27:42 AM |
Effect of trapped charge accumulation on the retention of charge trapping memory |
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| Jin Rui,Liu Xiaoyan,Du Gang,Kang Jinfeng and Han Ruqi.Effect of trapped charge accumulation on the retention of charge trapping memory[J].Chinese Journal of Semiconductors,2010,31(12):124016-4. |
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| Authors: | Jin Rui Liu Xiaoyan Du Gang Kang Jinfeng and Han Ruqi |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China;Institute of Microelectronics, Peking University, Beijing, 100871, China |
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| Abstract: | The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS. |
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| Keywords: | charge accumulation charge trapping memory retention characteristic |
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