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Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction |
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| Authors: | J Okabayashi M Watanabe H Toyao T Yamaguchi J Yoshino |
| Affiliation: | (1) Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku Tokyo, 152-8551, Japan;(2) Quantum NanoElectronics Research Center, Tokyo Institute of Technology, Ookayama, Meguro-ku Tokyo, 152-8551, Japan |
| Abstract: | We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 104 A/cm2 is estimated considering the effect of current pulse width. |
| Keywords: | Ferromagnetic semiconductor Tunneling magnetoresistance Current-driven magnetization reversal Current pulse-width |
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