Characterization of polysilicon-gate depletion in MOS structures |
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Authors: | Ricco B Versari R Esseni D |
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Affiliation: | Dept. of Electron., Bologna Univ.; |
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Abstract: | This paper presents a new technique to characterize the depletion capacitance and (active) impurity concentration of gate polysilicon in MOS transistors. The method has been validated by means of 2-D simulation; experimental results obtained with state-of-the-art n-channel 0.5 micrometer transistors are presented |
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