Dynamic NBTI lifetime model for inverter-like waveform |
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Authors: | Shyue Seng Tan Tu Pei Chen Lap Chan |
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Affiliation: | aSchool of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore;bChartered Semiconductor Manufacturing Ltd, 60 Woodlands Ind. Park D, Street 2, Singapore 738406, Singapore |
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Abstract: | In this paper, a simple yet accurate NBTI lifetime model has been formulated for a pMOSFET working in dynamic AC condition. The model is based on detailed dynamic NBTI (DNBTI) characterization for inverter-like waveform stress. The fitting parameters of the model can be readily obtained from the calibration of one-time DNBTI lifetime measurement for a small set of frequency/duty cycle matrix. After that, it can be employed to estimate the NBTI lifetime for a pMOSFET under any AC operating condition with reasonably good agreement. Additionally, it is shown that the lifetime enhancement by a shorter duty cycle is even more significant than that by a higher frequency. The application of the model to the lifetime estimation of circuits with multiple operation modes is also discussed. |
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