Extensive electrical model of large area silicon photomultipliers |
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Authors: | G. Condorelli D. SanfilippoG. Valvo M. MazzilloD. Bongiovanni A. PianaB. Carbone G. Fallica |
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Affiliation: | a STMicroelectronics, IMS R&D, Stradale Primosole 50, 95121 Catania, Italy b DIEET, Universita' di Palermo, Palermo 90100, Italy |
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Abstract: | In this paper the full electrical model of silicon photomultipliers fabricated at STMicroelectronics Catania R&D clean room facilities is presented. An accurate investigation on both SiPM single microcell and entire SiPM structure to extrapolate all the electrical elements has been executed by means of dedicated characterizations carried out on appropriate layout structure. The electrical simulations results are compared to the experimental data showing a good fit and therefore verifying the accuracy of the proposed model. This model can be used to describe all the SiPMs with different sizes manufactured using the same technology. Moreover, starting from this extensive electrical model, custom application software was developed in order to predict the possibility to profitably use the SiPM technology for different applications. |
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Keywords: | Silicon photomultiplier Geiger Mode Avalanche Diode Electrical model |
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