Flux monitor diode radiation hardness testing

A flux monitor diode is being explored as an option for measurement of the output of an X-ray tube that is used for active transmission measurements on a pipe containing UF₆ gas. The measured flux can be used to correct for any instabilities in the X-ray tube or the high voltage power supply. For this measurement, we are using a silicon junction p-n photodiode, model AXUV100GX, developed by International Radiation Detectors, Inc. (IRD, Inc.). This diode has a silicon thickness of 104 μ and a thin (3-7 nm) silicon dioxide junction passivating, protective entrance window. These diodes have been extensively tested for radiation hardness in the UV range. However, we intend to operate mainly in the 10-40 keV X-ray region. We are performing radiation hardness testing over this energy range, with the energy spectrum that would pass through the diode during normal operation. A long-term measurement was performed at a high flux, which simulated over 80 years of operation. No significant degradation was seen over this time. Fluctuations were found to be within the 0.1% operationally acceptable error range. After irradiation, an I-V characterization showed a temporary irradiation effect which decayed over time. This effect is small because we operate the diode without external bias.