Development of integrated ΔE-E silicon detector telescope using silicon planar technology

An integrated ΔE-E silicon detector telescope using silicon planar technology has been developed. The technology developed is based on standard integrated circuit technology and involves double sided wafer processing. The ΔE and E detectors have been realized in a PIN configuration with a common buried N⁺ layer. Detectors with ΔE thicknesses of 10, 15 and 25 μm, and E detector with thickness of 300 μm have been fabricated and tested with alpha particles using ²³⁸Pu-²³⁹Pu dual alpha source. The performance of the detector with ΔE detector of thickness 10 μm and E detector of thickness 300 μm has been studied for identification of charged particles using 12 MeV ⁷Li⁺ ion beam on carbon target. The results of these tests demonstrate that the integrated detector telescope clearly separates the charged particles, such as alpha particles, protons and ⁷Li. Due to good energy resolution of the E detector, discrete alpha groups corresponding to well known states of ¹⁵N populated during the reaction could be clearly identified.