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Scintillation properties of Ce-doped LuLiF4 and LuScBO3 |
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| Authors: | Takayuki Yanagida Yutaka FujimotoNoriaki Kawaguchi Yuui YokotaKei Kamada Daisuke TotsukaShun-Ichi Hatamoto Akira YoshikawaValery Chani |
| Affiliation: | a IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan b Materials Research Laboratory, Furukawa, Co. Ltd., 1-25-13 Kannondai, Tsukuba, Ibaragi 305-0856, Japan c Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383, Japan d Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho, Tatebayashi, Gunma 374-0047, Japan e Corporate Research and Development Center, Mitsui Mining and Smelting Co., Ltd., 1333-2 Haraichi, Ageo Saitama 362-0023, Japan |
| Abstract: | The crystals of 1 mol% Ce-doped LuLiF4 (Ce:LLF) grown by the micro-pulling down (μ-PD) method and 1 mol% Ce-doped LuScBO3 (Ce:LSBO) grown by the conventional Czochralski (Cz) method were examined for their scintillation properties. Ce:LLF and Ce:LSBO demonstrated ∼80% transparency at wavelengths longer than 300 and 400 nm, respectively. When excited by 241Am α-ray to obtain radioactive luminescence spectra, Ce3+ 5d-4f emission peaks were detected at around 320 nm for Ce:LLF and at around 380 nm for Ce:LSBO. In Ce:LSBO, the host luminescence was also observed at 260 nm. By recording pulse height spectra under γ-ray irradiation, the absolute light yield of Ce:LLF and Ce:LSBO was measured to be 3600±400 and 4200±400 ph/MeV, respectively. Decay time kinetics was also investigated using a pulse X-ray equipped streak camera system. The main component of Ce:LLF was ∼320 ns and that of Ce:LSBO was ∼31 ns. In addition, the light yield non-proportionality and energy resolution against the γ-ray energy were evaluated. |
| Keywords: | Scintillator LuLiF4 LuScBO3 Ce3+ Gamma-rays |
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