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Punch-through protection of SSDs in beam accidents |
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| Authors: | HF-W SadrozinskiC Betancourt A BieleckiZ Butko V FadeyevC Parker N PtakJ Wright Y UnnoS Terada Y IkegamiT Kohriki S MitsuiK Hara N HamasakiY Takahashi A ChilingarovH Fox |
| Affiliation: | a Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064, USA b Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801, Japan c University of Tsukuba, School of Pure and Applied Sciences, Tsukuba, Ibaraki 305-9751, Japan d Physics Department, Lancaster University, Lancaster LA1 4YB, United Kingdom |
| Abstract: | We have tested the effectiveness of punch-through protection (PTP) structures on n-on-p AC-coupled Silicon strip detectors using pulses from an 1064 nm IR laser, which simulate beam accidents. The voltages on the strips are measured as a function of the bias voltage and compared with the results of DC I-V measurements, which are commonly used to characterize the PTP structures. We find that the PTP structures are only effective at very large currents (several mA), and clamp the strips to much larger voltages than assumed from the DC measurements. We also find that the finite resistance of the strip implant compromises the effectiveness of the PTP structures. |
| Keywords: | Silicon strip detectors Punch-through protection p-type Laser pulses |
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