Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions |
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Authors: | M. N. Solovan V. V. Brus P. D. Maryanchuk |
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Affiliation: | 1. Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine
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Abstract: | Photosensitive n-TiN/p-Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of V oc = 0.4 V and a short-circuit current of I sc = 1.36 mA/cm2 under illumination at 80 mW/cm2. An analysis of the light current-voltage characteristic and quantum-yield spectrum demonstrate that the poor photoelectric parameters are due to recombination in the base region of the heterojunction and to the formation of a high-resistivity SiO2 layer on the surface of polycrystalline silicon, which fails to provide high-quality passivation of surface states. |
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