Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films |
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| Authors: | M. Ser nyi, J. Betko, . Nemcsics, N.Q. Khanh, D.K. Basa,M. Morvic |
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| Affiliation: | aHungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, H-1525 Budapest, Hungary;bSlovak Academy of Sciences, Institute of Electrical Engineering, Dúbravká cesta 9, SK-84239 Bratislava, Slovakia;cDepartment of Physics, Utkal University, Bhubaneswar 751 004, India |
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| Abstract: | In this study mechanical and electrical properties of the RF sputtered hydrogenated amorphous silicon germanium thin films deposited at room temperature have been discussed. Interesting correlation between the resistance and the flow of hydrogen is observed. Further, both band and hopping conduction mechanisms are found to exist simultaneously for the studied amorphous silicon germanium films. |
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