Environmental photostability of SF(6)-etched silicon nanocrystals

We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF(6)) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF(6)-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF(6)-etched SiNCs up to 160?°C. The observed thermal and UV stability of SF(6)-etched SiNCs combined with their PL quantum yields of up to ～50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF(6)-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.