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InGaAs探测器偏振响应特性的实验研究
引用本文:唐恒敬,李永富,李雪,龚海梅.InGaAs探测器偏振响应特性的实验研究[J].激光与光电子学进展,2011(4):23-27.
作者姓名:唐恒敬  李永富  李雪  龚海梅
作者单位:中国科学院上海技术物理研究所传感技术联合国家重点实验室;中国科学院红外成像材料与器件重点实验室;
基金项目:国家自然科学基金重点项目(61007067); 上海市科技人才计划项目(09XD1404500)资助课题
摘    要:分析了光电探测器偏振响应产生的原因,定义了探测器偏振敏感度的公式,制备了测试用InGaAs探测器.为了测试器件的偏振敏感度,搭建了测试系统,并对器件的偏振敏感特性进行了测试.结果表明,测试系统具有较好的稳定性;器件响应存在明显的偏振特性,正人射时器件的偏振敏感响应为0.27 dB,斜人射时器件偏振敏感有所增加,人射角度...

关 键 词:探测器  半导体器件物理  光电探测器  InGaAs  偏振响应  敏感度

Experimental Study on PolarizationDependent Response of InGaAs Photodetector
Tang Hengjing Li Yongfu Li Xue Gong Haimei State Key Laboratories of Transducer Technology.Experimental Study on PolarizationDependent Response of InGaAs Photodetector[J].Laser & Optoelectronics Progress,2011(4):23-27.
Authors:Tang Hengjing Li Yongfu Li Xue Gong Haimei State Key Laboratories of Transducer Technology
Affiliation:Tang Hengjing Li Yongfu Li Xue Gong Haimei State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China Key Laboratories of Infrared Imaging Materials and Detectors,China
Abstract:Response characteristic of photodetector,which is caused by polarization state of incident light,is analyzed.The calculation formula of polarizationdependent sensitivity is deduced,and an InGaAs detector is fabricated for the experimental test.In order to test the polarizationdependent sensitivity of photodetector,an experimental system is established,and the polarizationdependent sensitivity of the InGaAs detector is measured.The results indicate that the experimental system has a good stability and the po...
Keywords:detectors  semiconductor device physics  photodetector  InGaAs  polarization response  sensitivity  
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