High power devices in wide bandgap semiconductors |
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Authors: | OSTLING Mikael |
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Affiliation: | School of ICT, KTH Royal Institute of Technology, E229, SE-16440 Kista, Sweden |
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Abstract: | Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very hi... |
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Keywords: | high power devices SiC GaN MOSFET JFET BJT IGBT Schottky on-state loss switch loss |
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