| Affiliation: | (1) Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, 790-784 Kyungbuk, Korea |
| Abstract: | Atomic layer chemical vapor deposition (ALCVD) is a variant of a CVD process that involves surface deposition for the controlled growth of nano-thickness films. ALCVD is based on the self-limiting surface reaction with less than a monolayer chemisorption of chemical precursors. Advantages of the ALCVD process are uniform film growth on large area substrate, easy control of composition in atomic level, low growth temperature, multi-layer thin film growth with various composition, and wide process window. Since initially developed by Suntola in 1977, ALCVD has been used for the growth of various materials, including oxides, nitrides, metals, elements, and compound semiconductors. This article reviews the basic principle, mechanism, characteristics, and applications of ALCVD. |
