| 焦磷酸钾和双氧水对化学机械抛光中铜/钴电偶腐蚀及去除速率的影响 |
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| 引用本文： | 李浩然,张保国,李烨,阳小帆,杨朝霞. 焦磷酸钾和双氧水对化学机械抛光中铜/钴电偶腐蚀及去除速率的影响[J]. 电镀与涂饰, 2022, 0(1): 67-71 |
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| 作者姓名： | 李浩然 张保国 李烨 阳小帆 杨朝霞 |
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| 作者单位： | 河北工业大学电子信息工程学院;天津市电子材料与器件重点实验室 |
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| 摘 要： | 通过电化学测试和化学机械抛光(CMP)试验研究了pH=10的抛光液中焦磷酸钾和双氧水的质量分数对Cu/Co电偶腐蚀的影响。结果表明,适量K4P2O7和H2O2的存在能够有效减小Cu与Co之间的腐蚀电位差,最小可降至11 mV。采用由0.3%H2O2、0.1%K4P2O7和2%硅溶胶组成的抛光液进行化学机械抛光时,Cu、Co的去除速率分别为312.0?/min和475.6?/min。
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| 关 键 词： | 铜 钴 电偶腐蚀 化学机械抛光 焦磷酸钾 双氧水 去除速率 |
Effects of potassium pyrophosphate and hydrogen peroxide on galvanic corrosion between copper and cobalt and their removal rates during chemical mechanical polishing |
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| LI Haoran,ZHANG Baoguo,LI Ye,YANG Xiaofan,YANG Zhaoxia. Effects of potassium pyrophosphate and hydrogen peroxide on galvanic corrosion between copper and cobalt and their removal rates during chemical mechanical polishing[J]. Electroplating & Finishing, 2022, 0(1): 67-71 |
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| Authors: | LI Haoran ZHANG Baoguo LI Ye YANG Xiaofan YANG Zhaoxia |
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| Affiliation: | (School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | |
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| Keywords: | copper cobalt galvanic corrosion chemical mechanical polishing potassium pyrophosphate hydrogen peroxide removal rate |
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