Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures |
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Authors: | E M Dianov P A Trubenko E É Filimonov E A Shcherbakov |
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Affiliation: | (1) Fiber-Optics Scientific Center Institute of General Physics, Russian Academy of Sciences, 117942 Moscow, Russia |
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Abstract: | The thermal stability and luminescence properties of ZnCdSe/ZnSe quantum-well structures grown by molecular-beam epitaxy are
investigated. A comparative analysis is made of the photoluminescence spectra of the structures before and after annealing.
In the sample spectra after annealing (at 500 °C) a decrease in the intensity of the exciton luminescence line by more than
two orders of magnitude, accompanied by an increase in the intensity of the deep levels, is observed. As a result of annealing
at a lower temperature (about 400 °C), a narrowing of the exciton luminescence, accompanied by a shift of the maximum toward
longer wavelengths, was detected.
Fiz. Tekh. Poluprovodn. 31, 296–298 (February 1997) |
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