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Energy Spectra of the Local States in the Forbidden Gap of Monoclinic TlInS 2x Se 2(1?x) Crystals
Authors:S R Samedov  O Baykan  A Gulubayov
Affiliation:1. Information Technologies Research Institute, Marmara Research Centre, TUBITAK, P.K.21, 41470, Gebze/Kocaeli, Turkey
2. Physics Department of Mugla University, Mugla, Turkey
Abstract:Near IR properties of the mixed TlInS2xSe2(1?x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS2xSe2(1?x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap Eg = 2.22 eV was determined for β--TlInS2 crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i ⊥ c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be NA ? ND = 4.8 · 109 cm?3 and 1.9 · 1011 cm?3, respectively. It was found that in the solid solutions TlInS2xSe2(1?x) for 0.3 ≤ x ≤ 1, the conductivity follows the dependence σ (v) = σ0·υs in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a “tail” of the density of energy states in TlInS2xSe2(1?x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.
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