Transistor and circuit design for 100-200-GHz ICs |
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| Authors: | Griffith Z. Yingda Dong Scott D. Yun Wei Parthasarathy N. Dahlstrom M. Kadow C. Paidi V. Rodwell M.J.W. Urteaga M. Pierson R. Rowell P. Brar B. Sangmin Lee Nguyen N.X. Nguyen C. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA; |
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| Abstract: | Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f/sub /spl tau// and 490 GHz f/sub max/ DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150-GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete with advanced 100-nm SiGe processes, InP HBTs must be similarly scaled and high process yields are imperative. Described are several process modules in development: these include an emitter-base dielectric sidewall spacer for increased yield, a collector pedestal implant for reduced extrinsic C/sub cb/, and emitter junction regrowth for reduced base and emitter resistances. |
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