| 7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究 |
| |
| 引用本文： | 楼洁年. 7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究[J]. 固体电子学研究与进展, 1982, 0(1) |
| |
| 作者姓名： | 楼洁年 |
| |
| 摘 要： | 本文详细叙述了7～10千兆赫2.5瓦pn结砷化镓功率崩越管简化的设计方法和研究结果.200℃结温下获得的最佳电性能为7.76千兆赫、振荡输出功率2.6瓦.效率19.3%.用本器件研制的注入锁定放大器已成功地取代微波通讯机中的行波管.
|
Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes |
| |
| Abstract: | A simplified design approach and the research results of 7-11GHz,2.5W p-n junction GaAs power IMPATT diodes are described in detail. The optimun electrical performances obtained at the junction-temperature of 200℃ are as follows: the oscillation output power is 2.6W with efficiency of 19.3-percent at 7.76 GHz. An injection-locking amplifier using this device has successfully been substituted for TWT employed in the microwave communication system. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
