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基于Au-Si共晶键合的高灵敏MEMS电容薄膜真空规设计
引用本文:柯鑫,韩晓东,李得天,成永军,孙雯君,许马会,李刚.基于Au-Si共晶键合的高灵敏MEMS电容薄膜真空规设计[J].真空与低温,2021(1):38-44.
作者姓名:柯鑫  韩晓东  李得天  成永军  孙雯君  许马会  李刚
作者单位:兰州空间技术物理研究所真空技术与物理重点实验室;厦门大学航空航天学院
基金项目:国家自然科学基金重大科研仪器研制项目(61627805)。
摘    要:为了解决真空腔电极引线导致的真空漏气,进一步拓展真空规的测量下限,提出了一种基于Au-Si共晶键合的绝压式MEMS电容薄膜真空规设计方案.阐述了该新型MEMS电容薄膜真空规的制作工艺流程、用浓硼掺杂法制备感压薄膜技术,采用阳极键合协同Au-Si共晶键合技术实现真空腔的密封.通过理论计算和构建有限元模型,针对不同宽厚比,...

关 键 词:MEMS  电容薄膜真空规  Au-Si共晶键合  浓硼掺杂

Design of a Sensitive MEMS Capacitance Diaphragm Gauge Based on Au-Si Eutectic Bonding
KE Xin,HAN Xiaodong,LI Detian,CHENG Yongjun,SUNWenjun,XU Mahui,LI Gang.Design of a Sensitive MEMS Capacitance Diaphragm Gauge Based on Au-Si Eutectic Bonding[J].Vacuum and Cryogenics,2021(1):38-44.
Authors:KE Xin  HAN Xiaodong  LI Detian  CHENG Yongjun  SUNWenjun  XU Mahui  LI Gang
Affiliation:(Science and Technology on Vacuum Technology and Physics Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China;School of Aerospace Engineering,Xiamen University,Xiamen 361000,Fujian,China)
Abstract:In order to solve the vacuum leakage caused by the electrode lead in the vacuum cavity,and further expand the lower limit of vacuum gauge measurement,a design scheme of MEMS capacitor diaphragm gauge(CDG)based on Au-Si eutectic bonding was proposed.In this paper,a complete manufacturing process of MEMS CDG is put forward.It is proposed to select concentrated boron doping technology to develop pressure-sensing diaphragm,and to realize the sealing of vacuum cavity by anodic bonding and Au-Si eutectic bonding.Finally,based on the theoretical calculation and the finite element model,the overall size of the pressure-sensing diaphragm was optimized for different width-thickness ratio.Under the optimal size parameters,compared with the structure of the fixed electrode in the measurement cavity,the sensitivity of the designed new non-contact MEMS CDG is improved by 9.5 times,up to 38 fF/Pa.The measuring range of the MEMS CDG is within 1~1000 Pa.
Keywords:MEMS  capacitor diaphragm gauge  Au-Si eutectic bonding  concentrated boron doping
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