一种垂直递变流速氢化物气相外延(HVPE)反应腔流场分析及大尺寸材料生长

以氮化镓(GaN)为代表的第三代半导体材料,是我国重要战略发展方向之一,而氢化物气相外延(HVPE)作为一种重要材料生长技术,是有效制备单晶材料的工艺手段,本文提出了一种分层次递变流速下HVPE流场与温度场,在垂直腔结构条件下,模拟从腔体中间区域到边缘区域不同流速层次条件下,腔内材料生长区域反应前驱物分布,得出结论:在边缘喷射区域流速为中心区域流速三倍时,反应前驱物可以有效分布在衬底托盘表面。最后,在蓝宝石衬底GaN籽晶表面进行HVPE材料生长,获得平均厚度为20.1μm,均匀性起伏6.9%的GaN单晶,证明理论优化设计下生长出良好的单晶薄膜材料。

Flow Field Analysis and Large-Scale Material Growth in a Vertical Graded Varying Velocity Hydride Vapor Phase Epitaxy(HVPE)Reactor

Gallium nitride(GaN),as the representative of the wide gap semiconductor materials,is one of the important strategic development directions in our country.As an important material growth technology,hydride vapor phase epitax(HVPE)is an effective method for the fabrication of single crystal materials.In this paper,we propose a new flow field and temperature field of HVPE under the condition of stratified flow rate.The results indicate that the reaction precursors can be effectively distributed on the surface of the substrate susceptor when the flow velocity in the outer jet inlets region is three times that in the center region.Finally,HVPE material was grown on the surface of GaN seed crystal on sapphire substrate,and GaN single crystal with average thickness of 20.1μm and uniformity fluctuation of 6.9%was obtained,which proved that good single crystal film material was grown under theoretical optimization design.