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High-Speed Operation of Electrochemical Logic Circuits Depending on 3D Construction of Transistor Architectures
Authors:Jung Woo Moon  Dong Un Lim  Young No Kim  Jung Hyun Kim  Jin Hyeon Kim  Sae Byeok Jo  Jeong Ho Cho
Affiliation:1. Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722 Republic of Korea;2. Hydrogen Energy Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 Republic of Korea;3. School of Chemical Engineering, Sungkyunkwan University, Suwon, 16419 Republic of Korea;4. SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon, 16419 Republic of Korea
Abstract:The emergence of organic electrochemical transistors (OECTs) has opened a new era of printable electronics and bioelectronics, due to their unique advantages including innately superior transconductance and biocompatibility. Despite the foreseeable advancements available from their further implementations in fundamental logic circuitry, however, insufficient operation speeds and short compatibilities to scaling-down have so far hindered advanced integrations other than biosensing and biosignal amplifications. Here, a 3D-construction-dependent operational analysis of OECTs is reported, with which an all-vertical architectural design enabled unprecedentedly high operating speed and a facile expansion to large-area and high-density 3D crossbar arrays. A simple vertical channel architecture completed with solid-state Ag/AgCl top-gate electrodes enables an ultrafast redistribution of ions within channels, yielding a state-of-the-art operation frequency reaching 12 MHz V−1. Various printed logic circuit arrays, including NOT, NAND, and NOR gates, with high stability and reproducibility.
Keywords:electrochemical transistors  high-speed  ion penetration  vertical transistors
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