|
|||||
|
|
Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources |
|
| Authors: | Chen Shang Eamonn T. Hughes Matthew R. Begley Rosalyn Koscica Marc Fouchier Kaiyin Feng William He Yating Wan Gerald Leake Peter Ludewig John E. Bowers |
| Affiliation: | 1. Materials Department, University of California Santa Barbara, Santa Barbara, California, 93106 USA;2. Attolight AG, EPFL innovation Park, Lausanne, 1015 Switzerland;3. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California, 93106 USA;4. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California, 93106 USA Integrate Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah, 23955 – 6900 Saudi Arabia;5. Integrate Photonics Lab, King Abdullah University of Science and Technology, Thuwal, Makkah, 23955 – 6900 Saudi Arabia;6. RF SUNY Polytechnic Institute, Albany, NY, 12203 USA;7. NAsPIII/V, GmbH, Am Knechtacker 19, 35041 Marburg, Germany;8. Materials Department, University of California Santa Barbara, Santa Barbara, California, 93106 USA Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California, 93106 USA |
| Abstract: | Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt-coupled configuration and on-chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 ] direction of the III-V crystal for high yield, high performance, and scalable on-chip light sources at 300 mm scale. |
| Keywords: | device reliability heteroepitaxy monolithic integration quantum dot laser on Si Si photonics |