| CMP后的晶圆清洗过程研究 |
| |
| 引用本文： | 张伟锋,周国安,詹阳. CMP后的晶圆清洗过程研究[J]. 电子工业专用设备, 2008, 37(6) |
| |
| 作者姓名： | 张伟锋 周国安 詹阳 |
| |
| 作者单位： | 中国电子科技集团公司第四十五研究所,北京东燕郊,101601;中国电子科技集团公司第四十五研究所,北京东燕郊,101601;中国电子科技集团公司第四十五研究所,北京东燕郊,101601 |
| |
| 摘 要： | 伴随着整个CMP工艺的进步,CMP后清洗工艺技术也日趋关键。分析了引起缺陷和玷污的因素、微粒去除的理论研究以及清洗的方案;在清洗方案中详细论述了机械去除、化学湿法去除和兆声去除;最后指出了新的技术及发展趋势。
|
| 关 键 词： | CMP zeta电位 后清洗 兆声清洗 |
Study on Post-CMP Clean Process |
| |
| ZHANG Wei-feng,ZHOU Guo-an,ZHAN Yang. Study on Post-CMP Clean Process[J]. Equipment for Electronic Products Marufacturing, 2008, 37(6) |
| |
| Authors: | ZHANG Wei-feng ZHOU Guo-an ZHAN Yang |
| |
| Abstract: | The post-CMP technology is important as whose CMP process's developing. The paper focus on narrate the factors causing defects and contamination、the theory of particle and contaminant removal and process for post-CMP clean, which include brush scrubbing mechanism、chemical wet cleaning and the megasonic acoustic cleaning. And then we point out the new technology and the trend. |
| |
| Keywords: | CMP |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
