AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability |
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Authors: | S Miya S Muramatsu N Kuze K Nagase T Iwabuchi A Ichii M Ozaki I Shibasaki |
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Affiliation: | (1) Electronics Materials & Devices Laboratory, Asahi Chemical Ind. Co., LTD, 2-1, Samejima, 416 Fuji, Shizuoka, Japan |
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Abstract: | InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements
(HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high
electron mobility more than 23000 cm2/Vs and extrinsic effective electron velocity of 2.2 x 107 cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points
of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also
obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate,
and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs. |
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Keywords: | AIGaAsSb buffer/barriers deep quantum well field effect transistors Hall elements InAs reliability Sb |
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