| 超结MOSFET功率器件的终端技术分析 |
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| 引用本文： | 荆吉利,孙伟锋. 超结MOSFET功率器件的终端技术分析[J]. 固体电子学研究与进展, 2009, 29(4) |
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| 作者姓名： | 荆吉利 孙伟锋 |
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| 作者单位： | 东南大学国家专用集成电路系统工程技术研究中心,南京,210096 |
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| 摘 要： | 为了改善超结MOSFET功率器件的终端击穿特性,提出了一种平面结终端技术,应用柱坐标下的泊松方程证明了这种技术的可行性。提出了超结功率器件终端技术的工艺实现方法并分析了终端结构的电压特性,使用这种超结终端技术仿真得到了一个600V的Coolmos。利用2维仿真软件Medici讨论了终端p柱的数量和宽度因素对击穿电压和表面电场的影响。结果发现,采用变间距的超结结构本身就可以很好地实现超结MOSFET功率器件的终端。
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| 关 键 词： | 功率器件 终端技术 泊松方程 超结 |
Analysis of the Termination Technique for Superjunction MOSFET Power Device |
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| JING Jili,SUN Weifeng. Analysis of the Termination Technique for Superjunction MOSFET Power Device[J]. Research & Progress of Solid State Electronics, 2009, 29(4) |
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| Authors: | JING Jili SUN Weifeng |
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| Affiliation: | JING Jili SUN Weifeng(National ASIC System Engineering Research Center,Southeast University,Nanjing,210096,CHN) |
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| Abstract: | To improve edge termination for the superjunction MOSFET devices,a junction termination technique is proposed,the possibility of the realizing the termination structure is demonstrated by solving the Poisson's equation in the cylindrical coordinates.The method to optimization of the termination structure is given and the voltage characteristic under the termination is analyzed.A 600 V Coolmos can be obtained by the new termination technique.In addition,the influence of the breakdown voltage and the surface ... |
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| Keywords: | power device termination technique Poisson's equation superjunction |
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