Study of Ti/W/Cu,Ti/Co/Cu,and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes |
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| Authors: | H C Chang C S Lee S H Chen E Y Chang J Z He |
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| Affiliation: | (1) Department of Materials Science and Engineering and Microelectronics and Information System Research Center, National Chiao Tung University, 300 Hsinchu, Taiwan, Republic of China |
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| Abstract: | Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These
structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material
characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400°C; the Ti/Co/Cu Schottky structure
is thermally stable up to 300°C. Overall, the copper-metallized Schottky structures have excellent electrical characteristics
and thermal stability, and can be used as the Schottky metals for GaAs devices. |
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| Keywords: | Schottky diffusion barrier GaAs |
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