| 半绝缘衬底上Si掺杂InP的纳米孔腐蚀与电学性质研究 |
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| 引用本文： | 沈秋石,李林,苑汇帛,乔忠良,张晶,曲轶,刘国军. 半绝缘衬底上Si掺杂InP的纳米孔腐蚀与电学性质研究[J]. 长春理工大学学报(自然科学版), 2017, 40(2). DOI: 10.3969/j.issn.1672-9870.2017.02.005 |
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| 作者姓名： | 沈秋石 李林 苑汇帛 乔忠良 张晶 曲轶 刘国军 |
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| 作者单位： | 长春理工大学 高功率半导体激光国家重点实验室,长春,130022 |
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| 摘 要： | 利用MOCVD在InP半绝缘衬底上生长N型InP,在KOH溶液中电化学腐蚀形成纳米多孔结构的。通过实验证实在半绝缘衬底上的InP纳米孔腐蚀具有可行性,并且得到了腐蚀质量较好、图形清晰、结构规整的纳米孔材料。在对其进行霍尔测试,得到了腐蚀孔对于n型InP材料表面电学性质的改变,实现了低掺杂浓度(10~(18)cm~(-3))的InP通过表面纳米孔腐蚀的方式提高载流子浓度,改善n型InP层表面电学性能。
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| 关 键 词： | InP 纳米孔 Si掺杂 MOCVD 电化学腐蚀 |
Research on Morphology and Electricity of N-InP Doped Si Anodization Nanoporous on Semi-insulting Wafer |
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| SHEN Qiushi,LI Lin,YUAN Huibo,QIAO Zhongliang,ZHANG Jing,QU Yi,LIU Guojun. Research on Morphology and Electricity of N-InP Doped Si Anodization Nanoporous on Semi-insulting Wafer[J]. Journal of Changchun University of Science and Technology, 2017, 40(2). DOI: 10.3969/j.issn.1672-9870.2017.02.005 |
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| Authors: | SHEN Qiushi LI Lin YUAN Huibo QIAO Zhongliang ZHANG Jing QU Yi LIU Guojun |
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| Abstract: | The morphology and electricity of InP nanoporous was discussed. On the semi-insulting wafer, n-InP layer doped Si was grown by MOCVD. The porous structure was made in n-InP layer by anodization in aqueous KOH. The feasibility of pore propagation in InP layer over semi-insulting wafer was confirmed by experiment with clear sur-face imagination and regular structure of nanoporous as result. Through Hall test, it was discussed that how anodized pore propagation changed electronic capability of n-InP surface. It is realized that InP doped Si lower than 1018cm-3 could improve concentrate by process of anodiztion porous structure. |
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| Keywords: | InP nanoporous Si-doped MOCVD electrochemical anodization |
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