Growth and properties of Hg1-x Cdx Te epitaxial layers |
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Authors: | Y. Nemirovsky S. Margalit E. Finkman Y. Shacham-Diamand I. Kidron |
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Affiliation: | (1) Department of Electrical Engineering Microelectronics Research Center, Technion - Israel Institute of Technology, 32000 Haifa, Israel |
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Abstract: | The growth of epitaxial layers of mercury-cadmium-telluride (Hg1-xCdxTe) with relatively low x (0.2-0.3) from Te-rich solutions in an open tube sliding system is studied. The development of a semiclosed slider system with unique features permits the growth of low x material at atmospheric pressure. The quality of the films is improved by the use of Cd1-yZyTe and Hg1-xCdxTe substrates instead of CdTe. The substrate effects and the growth procedure are discussed and a solidus line at a relatively low temperature is reported. The asgrown epitaxial layers are p-type with hole concentration of the order of 1·1017 cm−3, hole mobility of about 300 cm2·V−1 sec−1 and excess minority carrier life-time of 3 nsec, at 77 K. |
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Keywords: | Hg1-x Cdx Te Liquid phase epitaxy. |
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