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MIM隧道结的电子输运特性和发光研究
引用本文:俞建华,孙承休.MIM隧道结的电子输运特性和发光研究[J].电子元件与材料,1998,17(1):27-29.
作者姓名:俞建华  孙承休
作者单位:东南大学
摘    要:论述作为一种新型发光器件的MIM隧道结的发光机理,报告了该器件的发光现象和I-V特性曲线中负阻现象的实验观察。数据显示,结中表面等离极化激元(SPP)与粗糙度的耦合是引起光发射的主要方面,SPP对隧穿电子的阻塞作用导致了电子输运中的负阻现象。此外,还观察到了直接辐射的紫外峰。

关 键 词:MIM隧道结发光机理负阻现象

Electron transference and light emission of MIM tunnel junction
Yu Jianhua,Sun Chengxiu,Wang Maoxiang,Wei Tongli.Electron transference and light emission of MIM tunnel junction[J].Electronic Components & Materials,1998,17(1):27-29.
Authors:Yu Jianhua  Sun Chengxiu  Wang Maoxiang  Wei Tongli
Abstract:The mechanism of MIM tunnel junction used as a novel plane light emission component and the observation result of the light emitting from this structure and negative differential resistance in its I V characteristic curves are represented It is found that the visible light peaks are mainly due to the coupling SPP to photon with surface roughness, and the SPP's impeding effect upon tunneling electron leads to negative differential resistance A peak in the ultraviolet region of the spectrum of light emitted from MIM tunnel junction The ultraviolet peak corresponds to the radiative surface plasma (16 refs )
Keywords:MIM tunnel junction  emission mechanism  negative  differential resistance
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