Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells |
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Authors: | REI Schropp RH Franken HD Goldbach ZS Houweling H Li JK Rath JWA Schüttauf RL Stolk V Verlaan CHM van der Werf |
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Affiliation: | Utrecht University, Faculty of Science, SID — Physics of Devices, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands |
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Abstract: | We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for μc-Si:H n-i-p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n-i-p's for any method of deposition. Such cells, used in triple junction cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single junction μc-Si:H n-i-p cell is entirely stable under prolonged light soaking. The triple junction cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top cells. The application of SiNx:H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiNx;H. Hot-wire SiNx:H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology. |
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Keywords: | HWCVD Solar cells Multijunction Efficiency Stability Silicon nitride |
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