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Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell |
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| Authors: | Tomoki Narita Tamio Iida Kouichi Mizuno Akihiro Kondo Takashi Itoh Yasuhito Tanaka |
| Affiliation: | a Gifu University, Environmental and Renewable Energy Systems, 1-1 Yanagido, Gifu 501-1193, Japan b Department of Electrical and Electronic Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan c S.F.C Corporation, Department of Research and Development, 75-1 Ono, Tsurumi, Yokohama, Japan |
| Abstract: | The effects of nitrogen ion bombardment on TiO2 films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO2 film increased with irradiation time. The refractive index n of the TiO2 film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 × 10− 2 to 1.2 × 10− 1 S/cm by the irradiation. These results are due to the formation of Ti-N bonds and oxygen vacancies in the film. |
| Keywords: | Catalytic chemical vapor deposition Ion bombardment Titanium oxide X-ray photoelectron spectroscopy (XPS) Optical properties Conductivity |
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