Application of pulsed laser deposited zinc oxide films to thin film transistor device |
| |
| Authors: | Paik-Kyun Shin Yoichiro Aya Kenji Ebihara |
| |
| Affiliation: | a School of Electrical Engineering, INHA University, 253 Yonhyun-Dong, Nam-Gu, Incheon 402-751, Republic of Korea
b Department of Electrical and Computer Engineering, Kumamoto University, 2-39-1 Kurokami, Kumamoto-City, Kumamoto 860-8555, Japan |
| |
| Abstract: | Transparent zinc oxide (ZnO) thin films were deposited on various substrates using a pulsed laser deposition (PLD) technique. During the PLD, oxygen pressure and substrate temperature were varied in order to find an optimal preparation condition of ZnO for thin film transistor (TFT) application. Dependence of optical, electrical and crystalline properties on the deposition conditions was investigated. The ZnO thin films were then deposited on SiN/c-Si layer structures in order to fabricate a TFT device. The pulsed laser deposited ZnO films showed a remarkable TFT performance: field effect mobility (μFE) of 2.4-12.85 cm2/V s and ratio of on and off current (Ron/off) in 2-6 order range. Influence of ZnO preparation conditions on the resulting TFT performance was discussed. |
| |
| Keywords: | Zinc oxide Pulsed laser deposition Thin film transistor |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
