Application of Cat-CVD for ULSI technology |
| |
| Authors: | Yoichi Akasaka |
| |
| Affiliation: | School of Engineering Science, Osaka University, 1-3 Machikaneyama Toyonaka, Japan |
| |
| Abstract: | The ULSI technology has been following Moore's law into the sub-100 nm era, although several challenging technical issues must be resolved. This paper describes possible application of Cat-CVD for ULSI technology beyond the 45 nm node. Especially, Cat-CVD SiN film for a transistor gate sidewall and/or a pre-metallic liner layer, and removal of photo resist (ash) by Cat-induced hydrogen atoms in the interconnect structure with an extreme low-k material are mainly discussed. |
| |
| Keywords: | Cat-CVD SiN LSI NBTI Hydrogen radical Ash ELK |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
