| Abstract: | We have performed a detailed study of the formation of Be+-implanted contacts to modulation-doped, p-channel, (InGa)As/GaAs, single-strained quantum wells. Photoluminescence at 4 K
from these structures is shown to be an excellent monitor of implant and annealing effects, as corroborated by Hall-effect
measurements. Rapid thermal annealing produced higher electrical activation of the Be implants than did arsine-over-pressure
annealing at comparable temperatures, similar to the trend in bulk GaAs. In contrast to conventional, alloyed-contact technologies,
the rapid-annealed, implanted structures provided ohmic contact to the quantum well even at 4 K. |
