Mid-infrared (8.5 /spl mu/m) semiconductor lasers operating at room temperature |
| |
| Authors: | C Sirtori J Faist F Capasso DL Sivco AL Hutchinson AY Cho |
| |
| Affiliation: | Bell Labs., Lucent Technol., Murray Hill, NJ, USA; |
| |
| Abstract: | The room-temperature pulsed operation of a semiconductor laser emitting at 8.5 /spl mu/m is reported. This device is an optimized vertical transition quantum cascade (QC) laser. At 300 K the peak output power from a single facet is 15 mW, and the current density at threshold is /spl sim/8 kA/cm/sup 2/. The temperature dependence of the threshold current density is described by a high T/sub 0/ (107 K) in the 200-320 K temperature range. |
| |
| Keywords: | |
|
|
