Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers |
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| Authors: | Hsieh J |
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| Affiliation: | Massachusetts Institute of Technology, Lexington, MA, USA; |
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| Abstract: | Deep Zn diffusion from a ZnP2source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the1.2-1.3 mum range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths (<10 mum), emission is usually single mode and linear. CW outputs up to ～8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation. |
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