Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing

In this paper, we are reporting the fabrication of memristor device (Ag/TiO₂/Cu) using electrohydrodynamic inkjet printing technology. The titanium oxide (TiO₂) active layer was deposited using electrohydrodynamic atomization technique. The metal electrodes were patterned by using electrohydrodynamic printing technique. The crystalline nature, surface morphology and optical properties of as deposited TiO₂ films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-visible spectroscopic analysis respectively. XRD and SEM studies revealed that the presence of anatase TiO₂ with uniform deposition. The optical transmittance of the deposited TiO₂ films was observed to be 87% in the visible region. The fabricated memristor device (Ag/TiO₂/Cu) exhibits bipolar resistive switching behavior within the low operating voltage (± 0.7 V). Our results ensure that the printed technology provides breakthrough solution in the electronic memory device fabrication.