| MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs |
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| 引用本文： | He Li,Chen Lu,Wu Jun,Wu Yan,Wang Yuanzhang,Yu Meifang,Yang Jianrong,Ding Ruijun,Hu Xiaoning,Li Yanjin,Zhang Qinyao. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. 半导体学报, 2006, 27(3): 381-387 |
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| 作者姓名： | He Li Chen Lu Wu Jun Wu Yan Wang Yuanzhang Yu Meifang Yang Jianrong Ding Ruijun Hu Xiaoning Li Yanjin Zhang Qinyao |
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| 作者单位： | 中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200083;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200084;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200085;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200086;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200087;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200088;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200089;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200090;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200091;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200092;中国科学院上海技术物理研究所 半导体材料器件研究中心,上海 200093 |
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| 摘 要： | 叙述了围绕第三代红外焦平面的需求所进行的HgCdTe分子束外延的一些研究结果.75mm HgCdTe薄膜材料的组分均匀性良好,80K下截止波长偏差为0.1μm.对所观察到的HgCdTe表面缺陷成核机制进行了分析讨论,获得的75mm HgCdTe材料平均表面缺陷密度低于300cm-2.研究发现As的表面黏附系数很低,对生长温度十分敏感,在170℃下约为1×10-4.计算表明,As在HgCdTe中的激活能为19.5meV,且随(Na∑Nd)1/3的增大呈线性下降关系,反比系数为3.1×10-5meV·cm.实验发现Hg饱和蒸汽压下,对应不同的温度240,380,440℃,As在HgCdTe中的扩散系数分别为(1.0±0.9)×10-16,(8±3)×10-15,(1.5±0.9)×10-13cm2/s.采用分子束外延生长的HgCdTe材料已用于红外焦平面探测器件的研制,文中报道了一些初步结果.
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| 关 键 词： | 分子束外延 碲镉汞 红外焦平面 MBE HgCdTe infrared focal plane arrays 第三代 红外焦平面 技术挑战 HgCdTe 分子束 外延 FPAs Infrared Generation Realization pressure temperatures diffusion coefficients slope decreases activation energy surface defects during growth temperature sensitive |
| 文章编号： | 0253-4177(2006)03-0381-07 |
| 收稿时间： | 2005-08-23 |
| 修稿时间： | 2005-08-23 |
MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs |
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| He Li,Chen Lu,Wu Jun,Wu Yan,Wang Yuanzhang,Yu Meifang,Yang Jianrong,Ding Ruijun,Hu Xiaoning,Li Yanjin and Zhang Qinyao. MBE HgCdTe:A Challenge to the Realization of Third Generation Infrared FPAs[J]. Chinese Journal of Semiconductors, 2006, 27(3): 381-387 |
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| Authors: | He Li Chen Lu Wu Jun Wu Yan Wang Yuanzhang Yu Meifang Yang Jianrong Ding Ruijun Hu Xiaoning Li Yanjin Zhang Qinyao |
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| Affiliation: | Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200084,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200085,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200086,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200087,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200088,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200089,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200090,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200091,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200092,China;Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200093,China |
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| Abstract: | |
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| Keywords: | MBE HgCdTe infrared focal plane arrays |
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