| 利用CF4等离子体制作高开口率TFT-LCD |
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| 引用本文： | 金奉柱,崔瑩石,劉聖烈,張炳鉉,柳在一,李禹奉,李貞烈,Jung-yeal LEE.利用CF4等离子体制作高开口率TFT-LCD[J].液晶与显示,2006,21(5):409-413. |
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| 作者姓名： | 金奉柱 崔瑩石 劉聖烈 張炳鉉 柳在一 李禹奉 李貞烈 Jung-yeal LEE |
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| 作者单位： | 1. 京东方科技集团股份有限公司,中央研究院,北京,100016
2. BCRI, BOE Technology Group Co., Ltd.,Beijing 100016,China |
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| 基金项目： | Supported by Key Itemof Beijing Scientific and Technical Project(No . D0304002) |
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| 摘 要： | 为了获得高的开口率,有必要优化设计参数和工艺容差。通常的过孔刻蚀工艺采用SF6基气体进行刻蚀,但是这种方法在金属和钝化层之间的选择性太小,因此,必须增加过孔的尺寸才行。为了克服上述问题,在本研究中用CF4气体代替SF6气体进行刻蚀,结果在FFS 5 .16(2 .03 in)像素结构中,开口率提高了60 %。
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| 关 键 词： | TFT-LCD 开口率 刻蚀 CF4等离子体 |
| 文章编号： | 1007-2780(2006)05-0409-05 |
| 修稿时间： | 2006年7月19日 |
Development of High Aperture Ratio TFT-LCD by CF4 Plasma |
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| Bong-joo KIM,Hyung-suk CHOI,Seong-yeol YOO,Byeong-hyeon JANG,Won-sok KIM,Jai-il RYU,Woo-bong LEE,Jung-yeal LEE.Development of High Aperture Ratio TFT-LCD by CF4 Plasma[J].Chinese Journal of Liquid Crystals and Displays,2006,21(5):409-413. |
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| Authors: | Bong-joo KIM Hyung-suk CHOI Seong-yeol YOO Byeong-hyeon JANG Won-sok KIM Jai-il RYU Woo-bong LEE Jung-yeal LEE |
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| Abstract: | In order to have high aperture, it is necessary to modify design parameters and process tolerance. General process for via etch process was to use SF_6 base gas for etching. However, that showed too low selectivity between metal and passivation layers, therefore, via-hole size should be increased. In this study, CF_4 gas instead of SF_6 gas was used to overcome those two problems. Finally, it was found that more than 60 % aperture ratio was achieved in our FFS 5.16 cm(2.03 in) pixel structure. |
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| Keywords: | TFT-LCD aperture ratio etching CF_4plasma |
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