| Abstract: | A comprehensive review on the current status and prospects of vertical gallium nitride(GaN) power devices is presented.The paper starts with an introduction of the market potential for GaN power devices, and presents a comparison between lateral and vertical GaN power devices.Then, different high-performance vertical GaN power devices are introduced, including diodes and transistors on free-standing GaN substrates and low-cost Si substrates.The paper is concluded by elucidating the research and commercialization prospects in developing several key components of vertical GaN power devices.This relatively new area has only been explored for 3-5 years, but already seen the demonstration of a series of successful vertical power devices that outperformed lateral GaN power devices and conventional Si power devices.There are tremendous research opportunities regarding materials, physics, devices and system-level integrations of vertical GaN power devices.The vertical GaN power devices show great potential for 600 V level high-current,high-voltage and high-power applications. |
