High transconductance selfaligned WSi gate AlInAs/GaInAs HIGFETs grown by MOCVD |
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| Authors: | Kamada M Ishikawa H |
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| Affiliation: | Sony Corp. Res. Center, Yokohama, Japan; |
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| Abstract: | HIGFETs were fabricated using an AlInAs/GaInAs heterostructure grown by MOCVD. The 1 mu m-gate HIGFET showed a maximum transconductance of 740 mS/mm at room temperature, which is the highest transconductance obtained for HIGFETs. The reduction of the AlInAs layer thickness to 30 nm and the low source resistance are the primary reasons for this enhancement.<> |
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