| GaAs MESFET二维计算机辅助分析 |
| |
| 引用本文： | 潘晓明. GaAs MESFET二维计算机辅助分析[J]. 固体电子学研究与进展, 1982, 0(3) |
| |
| 作者姓名： | 潘晓明 |
| |
| 摘 要： | 编制了MESFET通用二维分析程序.通过对一个GaAs MESFET进行二维数值分析,得到了典型偏置条件下,沟道内各点的静电电位和自由电了浓度,计算了某些重要的器件参数.解释了短栅器件收漏电流泡和机理.计算结果与国外文献中有关报道相符.
|
Computer Aided Two-Dimensional Analysis of a GaAs MESFET |
| |
| Abstract: | A general program for two-dimensional analysis of the MESFET has been written and especially a numerical analysis for the GaAs MESFET is performed. As a result, electric potential and free electron densities in the channel have been achieved at a typical bias; some of important device parameters are calculated. Also given in the paper is the explanation for saturation mechanism of source-drain current of short-gate devices. The calculated results are in good agreement with that published in foreign literatures. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
