High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices |
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Authors: | Sarua A. Bullen A. Haynes M.. Kuball M.. |
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Affiliation: | Bristol Univ., Bristol; |
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Abstract: | Self-heating in multifinger GaAs pseudomorphic-HEMT devices was investigated by micro-Raman spectroscopy. The device temperature was probed on the die as a function of applied bias, external heating, and device geometry. The temperature of the top GaAs layer was recorded inside the source-drain gap, as well as on the device periphery using 488-nm laser excitation. Obtained Raman temperatures were found to be higher than infrared thermography results, which is due to the improved spatial resolution of micro-Raman spectroscopy. Thermal resistance and crosstalk in the multifinger devices was evaluated as a function of thermal stress and finger pitch. |
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